Nonvolatile semiconductor memory, method for reading out thereof, and memory card

ABSTRACT

A nonvolatile semiconductor memory includes: a memory cell unit including a plurality of memory cells having an electric charge accumulation layer and a control electrode, said memory cells being electrically connected in series; a plurality of word lines, each of which is electrically connected to said control electrode of said plurality of memory cells; a source line electrically connected to said memory cells at one end of said memory cell unit; a bit line electrically connected to said memory cells at the other end of said memory cell unit; and a control signal generation circuit, which during a data readout operation staggers a timing for selecting the word line connected to said memory cells of said memory cell unit from a timing for selecting a non-selected word line connected to a non-selected memory.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of and claims the benefit of priorityunder 35 U.S.C. §120 from U.S. Ser. No. 12/361,362 filed Jan. 28, 2009,which issued as U.S. Pat. No. 7,710,779, which is a divisional of U.S.Ser. No. 11/558,714 filed Nov. 10, 2006, which issued as U.S. Pat. No.7,529,131, and claims the benefit of priority under 35 U.S.C. §119 fromJapanese Patent Application Nos. 2005-327725 filed Nov. 11, 2005, andNo. 2005-354034 filed Dec. 7, 2005, the entire contents of each of whichare incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a nonvolatile semiconductor memory, a methodfor data readout thereof, and a memory card, and in particular relatesto an electrically erasable type nonvolatile semiconductor memory, amethod for reading out data and a memory card in which an electricallyerasable type nonvolatile semiconductor memory is mounted.

2. Description of the Related Art

In recent years, among semiconductor memories, a nonvolatilesemiconductor memory in which the programmed data are in a nonvolatileway held is diffused. In the nonvolatile semiconductor memory,electrically erasable type nonvolatile semiconductor memory having aNAND type memory cell array (hereinafter will be simply called as a NANDtype nonvolatile semiconductor memory) is suitable for enlarging storagecapacity.

In a memory cell array of the NAND type nonvolatile semiconductormemory, a plurality of memory cell units are disposed in a matrix shape.One memory cell of the memory cell units is constituted by an electricfiled effect transistor. The electric filed effect transistor having anelectric charge accumulation layer, a control electrode, a source regionand a drain region. This electric charge accumulation layer iselectrically floating. The memory cell unit provides with a plurality ofmemory cells that is electrically connected in series, a drain sideselection transistor that is connected to a drain region of one end ofthe plurality of memory cells, and a source side selection transistorthat is connected to a source region of the other side of the pluralityof the memory cells.

In the memory cell units, the source region and the drain region of thememory cells that are mutually adjacent are shared. In the respectivecontrol electrodes of the plurality of memory cells, word lines, inwhich the memory cell array is extended, are electrically connected.Further, in a drain region of one end of memory cell of the memory cellunits, a bit line is connected via a drain side selection transistor. Ina gate electrode of the drain side selection transistor, a drain sidegate line is connected. In a source region of the other side of memorycell of the memory cell units, a source line is connected via a sourceside selection transistor. In a gate electrode of the source sideselection transistor, a source side selected gate line is connected. Inthe NAND type nonvolatile semiconductor memory, a decoder, a dataprogramming circuit, a data readout circuit and so forth are disposed.

In a data programming operation of the NAND type nonvolatilesemiconductor memory, data may be programmed in a selected memory cellby applying an appropriate program voltage, a control voltage and soforth, to each of: a being selected word line, a selected bit line, aselected source line, a selected drain side selected gate line, and aselected source side selected gate line. On the other hand, data is notprogrammed in non selected memory cells by applying a non-programvoltage, a control voltage and so forth, to a being non-selected wordlines and so forth.

In addition to above, related art in respect to a data programmingoperation are disclosed in JP H08-55488 A, and JP 2000-173300 A,respectively.

Further, the data readout operation of the NAND type nonvolatilesemiconductor memory are performed in the following procedure. Firstly,the voltage of the selected drain side selected gate line is boosted,for instance, to a degree of 4V so that the selected drain side selectedtransistor is made be in an on-state; subsequently, a voltage of about1V is applied to the selected bit line; and a readout voltage is appliedto the selected word line that is connected to the selected memory cell.On the other hand, the voltage of the non-selected word line that isconnected to the non-selected memory cells other than the selectedmemory cell is boosted, for instance, to a degree of 5V so that thenon-selected memory cells made be in an on-state. Afterwards, thevoltage of the source side selected gate line is boosted, for instance,to a degree of 4V so that the source side selected gate transistor ismade be in an on-state. Then, detecting the voltage change of theselected bit line generated by this result, whether “0” data or “1” dataare stored in the selected memory cell.

In addition the related art in respect to a data readout operation isdisclosed in JP 2005-108404 A.

BRIEF SUMMARY OF THE INVENTION

A first aspect of the embodiment of the invention relates to anonvolatile semiconductor memory comprising: a memory cell unitincluding a plurality of memory cells having an electric chargeaccumulation layer and a control electrode, the memory cells beingelectrically connected in series; a plurality of word lines, each ofwhich is electrically connected to the control electrode of theplurality of memory cells; a source line electrically connected to thememory cells at one end of the memory cell unit; a bit line electricallyconnected to the memory cells at the other end of the memory cell unit;and a control signal generation circuit, which during a data readoutoperation staggers a timing for selecting the word line connected to thememory cells of the memory cell unit from a timing for selecting anon-selected word line connected to a non-selected memory.

A second aspect of the embodiment relates to a method for reading dataout of nonvolatile semiconductor memory including: a memory cell unit inwhich each memory cell has an electric charge accumulation layer and acontrol electrode electrically connected in series; a plurality of wordlines, each of which is electrically connected to a control electrode ofthe plurality of memory cells; a bit line which is electricallyconnected to the memory cells at one end of the memory unit; and asource line electrically connected to the memory cells at the other endof the memory unit, the method comprising: selecting a non-volatile wordline which is connected to a non-selected memory cell of the memoryunit; delaying a selected word line which is connected to a selectedmemory cell of the memory unit for selection timing of the non-selectedword line; and selecting the word line.

A third aspect of the embodiment relates to a memory card comprising: anonvolatile semiconductor memory defined in the first aspect; acontroller which controls an operation of the nonvolatile semiconductormemory; and a pad section connected to the nonvolatile semiconductormemory via said controller and which performs an input of controlsignal, an input of power and an input/output of data.

A fourth aspect of the embodiment relates to a nonvolatile semiconductormemory comprising: a memory cell unit in which a plurality of memorycells have an electric charge accumulation layer and a control electrodeelectrically connected; and a source side selection transistor iselectrically connected to the memory cell of one end of the plurality ofmemory cells; and a drain side selection transistor is electricallyconnected to the other end of the plurality of memory cells; a pluralityof word lines each of which is electrically connected to a controlelectrode of the plurality of memory cells; a source line which iselectrically connected to the source side selection transistor; a bitline which is electrically connected to the drain side selectiontransistor; a gate line control circuit, in which on a data readoutoperation, the drain side selection transistor is operated after theoperation of the source side selection transistor when a selected memorycell is adjacent to the source side selection transistor, and the sourceside selection transistor is operated after the operation of the drainside selection transistor when the selected memory cell is adjacent tothe drain side selection transistor; and a control signal generationcircuit in which on a data readout operation, the select voltage appliedto a selected word line connected to a selected memory cell is changeddepending on either when the selection memory cell is adjacent to thesource side selection transistor or when the selection memory cell is tothe drain side selection transistor.

A fifth aspect of the embodiment relates to a nonvolatile semiconductormemory comprising: a memory cell unit in which a plurality of memorycells have an electric charge accumulation layer and a control electrodeelectrically connected; and a source side selection transistor iselectrically connected to the memory cell of one end of the plurality ofmemory cells; and a drain side selection transistor is electricallyconnected to the other end of the plurality of memory cells; a pluralityof word lines each of which is electrically connected to a controlelectrode of the plurality of memory cells; a source line which iselectrically connected to the source side selection transistor; a bitline which is electrically connected to the drain side selectiontransistor; a gate line control circuit, in which on a data readoutoperation, the drain side selection transistor is operated after theoperation of the source side selection transistor when a selected memorycell is adjacent to the source side selection transistor, and the sourceside selection transistor is operated after the operation of the drainside selection transistor when the selected memory cell is adjacent tothe drain side selection transistor; and a control signal generationcircuit, which during a data readout operation staggers a timing forselecting the word line connected to the memory cells of the memory cellunit from a timing for selecting a non-selected word line connected to anon-selected memory, and in which on a data readout operation, theselect voltage applied to a selected word line connected to a selectedmemory cell is changed depending on either when the selection memorycell is adjacent to the source side selection transistor or when theselection memory cell is to the drain side selection transistor.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a functional block diagram of the nonvolatile semiconductormemory according to a first embodiment of the present invention.

FIG. 2 is a circuit diagram of memory cell array of the nonvolatilesemiconductor memory according to the first embodiment.

FIG. 3 is a functional block diagram showing the memory cell array andthe detailed word line control circuit and a control signal generationcircuit in the nonvolatile semiconductor memory according to the firstembodiment.

FIG. 4 is a timing chart of readout operation of the nonvolatilesemiconductor memory according to the first embodiment.

FIG. 5 is a first waveform diagram showing a simulation result in thecase timing of the boosting voltage of the selected word line is madedelay for 0.5 μs as compared to timing of the boosting voltage of thenon-selected word lines, in a data readout operation of the nonvolatilesemiconductor memory according to the first embodiment.

FIG. 6 is a second waveform diagram showing a simulation result in thecase the timing of the boosting voltage of selected word line is madedelay for 1.0 μs as compared to the timing of the boosting voltage ofthe non-selected word lines in the data readout operation of thenonvolatile semiconductor memory according to the first embodiment.

FIG. 7 is a third waveform diagram showing a simulation result in thecase the timing of the boosting voltage of the selected word line ismade delay for 1.5 μs as compared to the timing of the boosting voltageof the non-selected word lines in the data readout operation of thenonvolatile semiconductor memory according to the first embodiment.

FIG. 8 is a waveform diagram showing a simulation result in the case thetimings of the boosting voltage of the selected word line and thenon-selected word lines are made identical in the data readout operationof the nonvolatile semiconductor memory according to a comparativeexample.

FIG. 9 is a circuit diagram of a select voltage transfer circuit of acontrol signal generation circuit according to the first embodiment.

FIG. 10 is a timing chart explaining an operation of the select voltagetransfer circuit shown in FIG. 9.

FIG. 11 is a cross section structural view of a substantial section ofthe nonvolatile semiconductor memory according to the first embodiment.

FIG. 12 is a diagram showing a threshold level of data stored in thememory cells of the nonvolatile semiconductor memory according to thefirst embodiment.

FIG. 13 is a system configuration diagram of a memory card on which thenonvolatile semiconductor memory according to the first embodiment ismounted.

FIG. 14 is a first timing chart explaining a readout operation of thenonvolatile semiconductor memory according to the second embodiment ofthe present invention.

FIG. 15 is a second timing chart explaining the readout operation of thenonvolatile semiconductor memory device according to the secondembodiment.

FIG. 16 is a third timing chart explaining the readout operation of thenonvolatile semiconductor memory according to the second embodiment.

FIG. 17 is a fourth timing chart explaining the readout operation of thenonvolatile semiconductor memory according to the second embodiment.

FIG. 18 is a fifth timing chart explaining the readout operation of thenonvolatile semiconductor memory according to the second embodiment.

FIG. 19 is a sixth timing chart explaining the readout operation of thenonvolatile semiconductor memory according to the second embodiment.

FIG. 20 is a seventh timing chart explaining the readout operation ofthe nonvolatile semiconductor memory according to the second embodiment.

FIG. 21 is a timing chart explaining the readout operation of thenonvolatile semiconductor memory according to a comparative example.

FIG. 22 is a block diagram of a control signal generation circuitaccording to the second embodiment.

DETAILED DESCRIPTION OF THE INVENTION First Embodiment

This inventors and the like conducted an examination especially for adata readout operation of the NAND type nonvolatile semiconductormemory; as a result, they found a fact that improvement of operationfunction is prevented mainly by generation of 2 noises. To explainconcretely, in the case voltage is applied to the selected word linethat is connected to a control electrodes (a control gate electrode) ofthe selected memory cell, one noise is caused by undershoot in whichelectric charge is flown to a side of select voltage generation circuitthat is connected to the selected word line in the external section ofmemory cell array. The other noise is caused by an overshoot based oncoupling noise that is occurred in the select voltage of the selectedword line when voltage of the non-selected word lines is boosted in thereadout voltage (a non-select voltage). These noises are not only inducean error operation in the readout operation and program operation of theNAND type nonvolatile semiconductor memory, but also lead to increase ofreadout operation time and program operation time.

This inventors and the like eagerly conducted an examination based onsuch point of view. Then, in the data readout operation of the NAND typenonvolatile semiconductor memory, the inventors and the like came upwith the idea that, timing of the above-mentioned occurrence of twonoises may be shifted by shifting timing applying the readout voltage ofdata stored in the memory cells for the timing applying the selectvoltage of the memory cells of memory cell unit, which in turn mayreduce effect of the noises. As a consequence, the present invention iscompleted.

The following will be explained on a first embodiment of the presentinvention referring to the accompanying drawings. However, the presentinvention can be conducted in a much variety of aspects other than thefirst embodiment that will be explained from now on thus, the presentinvention is not limited to the first embodiment. In addition, in thefirst embodiment and a second embodiment described later, same symbolsare referred to a part having the same or similar function to skip therepeated explanation.

[A System Configuration of the NAND Type Nonvolatile SemiconductorMemory]

As shown in FIG. 1, the NAND type nonvolatile semiconductor memory 1 isprovided with: a memory cell array 2, a bit line control circuit 3; aword line control circuit 4; a gate line control circuit 5; a controlsignal generation circuit 5; a control signal generation circuit 6; adata input-output buffer 8; a signal input terminal 7; and a datainput-output terminal 9. The memory cell array 2 is provided with: aplurality of selected gate lines; a plurality of word lines arrangedamong the plurality of gate lines; a plurality of source lines; aplurality of bit lines arranged crossing a plurality of word lines, aplurality of selected word lines and a plurality of source lines; and aplurality of memory cells arranged in a matrix shape. The bit linecontrol circuit 3 controls a bit line arranged in the memory cell array2. The word line control circuit 4 controls a word line arranged in thememory cell array 2. The gate line control circuit 5 controls theselected gate lines arranged in a memory cell array 2. The controlsignal generation circuit 6 generates each of the control signals ofsuch as the word lines control circuit 3, the bit line control circuit 4and the gate line control circuit 5, and so forth. The control signalgeneration circuit 6 is connected to the signal input terminal 7, inwhich a signal that will become a base for generation of the controlsignals. The data input-output buffer 8 is connected to the bit linecontrol circuit 3, and the data input-output terminal 9 is connected tothe data input-output buffer 8. In addition, in the first embodiment andthe second embodiment described later, either of the bit line controlcircuit 3, the word line control circuit 4, the gate line controlcircuit 6, the control signal generation circuit 6 and the datainput-output buffer 8 are arranged around the memory cell array 2; thus,they are simply defined “a peripheral circuit section”.

The memory cell array 2, as shown in FIG. 2, is configured arranging inparallel a plurality of memory cell units MU0, MU1, . . . , MUj. Here,only a part of the memory cell units is shown. However, in fact, thememory cell units MU0 to MUj are further arranged in a matrix shape.Either of the memory cell units MU0 to MUj provide a plurality of memorycells MC0, MC1, . . . , MCi. The connectivity number of the memory cellsMC is set based on, for instance, 8, 16, 32, . . . of byteconfiguration. One memory cell MC at least provides an electric chargeaccumulation layer (a floating gate electrode in the first embodiment),a control electrode (a control gate electrode), and the source regionand drain region. In the plurality of memory cells MC0 to MCi, a sourceregion of one memory cell and a drain region of the other memory, whichare adjacent to each other, are configured to a unification so that theboth regions are shared. In addition, either of the memory cell unitsMU0 to MUj are configured providing with a plurality of memory cells MC0to MCi electrically connected in series in this way, a source sideselection transistor S1 in which the drain region is electricallyconnected to one end (source side) of the memory cell MC0, the drainside selection transistor 2 in which the source region is connected toother end (drain side) of memory cell MCi.

In each of the control electrodes of the memory cells MC0, MC1, . . . ,MCi, word line WL0, WL1, . . . , WLi are connected respectively. Theword line WL0 is connected to the memory cells MC0 arranged on the sameposition of each of the memory cell units MU0 to MUj; the word line WL1is connected into the memory cell MC1 arranged on the same position, andfollows as the same. To the gate electrode of each of the source sideselection transistor S1 of the memory cell units MU0 to MUj, a sourceside selected gate line SGS is connected that is common to the memorycell array 2. Similarly, to the gate electrode of the drain sideselection transistor S2, a drain side selection gate line SGD isconnected that is common to the memory cell array 2. Further, to thesource region of each of the source side selection transistor S1 of thememory cell units MU0 to MUj, cell source line CELSRC is connected thatis common to the memory cell array 2. To the drain region of the drainside selection transistor S2, bit lines BL0, BL1, . . . , BLi areconnected respectively.

The control signal generation circuit 6 of the peripheral circuitsection, as shown in FIG. 3, the readout voltage generation circuit 61in which the readout voltage Vread is generated, the select voltagegeneration circuit 62 in which the select voltage Vcgrv is generated,and the select voltage transfer circuit 63 in which what kind of voltageis given to the selected word line WL is decided, are at least provided.On the other hand, as shown in FIG. 3, the word line control circuit 4is provided with a plurality of voltage transmit transistors 41 that areconnected to each of the one ends of a plurality of word lines WLarranged in the memory cell array 2, and a plurality of control gatedrivers (hereinafter will be simply called as “CG driver”.) 42 that arerespectively connected to the plurality of the voltage transmittransistors 41. Each of the CG drivers 42 are connected to the readoutvoltage generation circuit 61 and the select voltage generation circuit62. In the control signal generation circuit 6 and the word line controlcircuit 4, the memory cell connected to the word line WL may be selectedeither “a readout voltage Vread” or “a selected voltage Vcgrv” dependingon “selected” or “non-selected”. Each of the gate electrodes of theplurality of voltage transmit transistors 41 is connected to a commongate line. When voltage more than the predetermined value (selectvoltage) is applied, the plurality of voltage transmit transistor 41becomes in an on-state all at once, and thus the select voltages areapplied to each of the plurality of word lines WL from the plurality ofCG driver 42.

In the select voltage transfer circuit 63 of the control signalgeneration circuit 6, timing for applying the select voltage to the wordline (the CG driver 42 in the actual practice) may be controlled. Theconcrete operation method will be explained later. The select voltagetransfer circuit 63 transmits the program voltage into the selected wordlines WL via the CG drivers 42 on the program operation, together withbeing used on the readout operation.

[Data Readout Operation]

Next, data readout operation of the above mentioned NAND typesemiconductor memory 1 will be explained using FIG. 4. The timing chartshown in FIG. 4 is a timing chart in which the memory cell MC0 adjacentto the source side selection transistor S1 in the memory cell unit MU0shown in FIG. 2 is considered as the selected memory cell and in whichthe data stored in the memory cell MC0 is read. The memory cells otherthan the memory cells MC1 to MCi are non-selected memory cells.

The data readout operation of the NAND type nonvolatile semiconductormemory 1 according to the first embodiment, at first at a time t1,applies a voltage Vsg to the source side selected gate line SGS, andthus the source side selection transistor S1 is made become in anon-state. Next at a time t2, a voltage Vb1 is applied to a bit line BL0.Then, at a time t3, readout voltage (non-select voltage) Vread isapplied to the non-selected word lines WL1 to WLi that are connected tothe non-selected memory cells MC1 to MCi other than the selected memorycell MC0. Afterwards, at a time t4, the select voltage Vcgrv that isboosting voltage to the word line WL0 connected to the selected memorycell MC0, is applied.

And afterwards, at a time t5, a voltage Vsg is applied to the drain sidegate line SGD, and thus the drain side selection transistor S2 is madebecome in an on-state. By the series of operation, the drain sideselection transistor S2, the source side selection transistor S1 and thenon-selected memory cell MC0 become in an on-state, so that a voltagechange occurs to the selected bit line BL0 depending on whether data “0”is stored or data “1” is stored in the selected memory cell MC0. At atime t6, data “1” or data “0” may be read out by judging the voltagechange of the selected bit line BL0.

Here in addition, the timing chart will be explained considering thememory cell MC0 adjacent to the source side selection transistor S1 asthe selected memory cell. However, the first embodiment does not limitthe position of selected memory cell of the memory cell unit MU0 becauseinfluence of coupling noise between the selected word line WL and thenon-selected word line WL adjacent to the selected word line WL arereduced.

[Advantages of Data Readout]

The NAND type semiconductor memory 1 according to the first embodimentperforms a control in the data readout operation, in which timingbetween boosting of the selected word line WL0 (application timing ofthe select voltage) and boosting of the non-selected word line WL1 toWLi (application timing of the non-select voltage) differs. In otherwords, the timing of the boosting voltage of the selected word line WL0becomes later than that of the boosting voltage of the non-selected wordline WL1 mostly adjacent to the selected word line WL0. This is because:the non-selected memory cell MC1 is adjacent to the selected memory cellMC0; and when the timings between the boosting voltage of the selectedmemory cell MC0 and the non-selected memory cell MC1 are same, couplingnoise occurs among them; and therefore it should be avoided that thevoltage of the selected word line WL0 is dragged toward the voltage ofthe non-selected word line WL1 and then overshot.

Explaining in more particular, in the case the timing of the boostingvoltage of the selected word line WL0 and that of the boosting voltageof the non-selected word line WL1 are same, two noises is occurred. Onenoise a noise that is occurs at the moment the space between theselected word line WL0 and the select voltage generation circuit 62 (SeeFIG. 3.) is electrically connected via the CG driver 42. The load of theselect voltage generation circuit 62 become large because the selectedword line WL0 is charged at the moment the select voltage generationcircuit 62 is connected to the selected word line WL0. Charge voltageflows into the load to undershoot the potential of the selected wordline WL0. In addition, it requires a time progress the selected voltagegeneration circuit 62 hereafter keeps charging the load of the selectedword line WL0 continuously and thus may be made converge into the selectvoltage Vcgrv (approximately 2V, for instance). The other noise is acoupling noise that is added to the voltage of the selected word lineWL0 when the voltage of non-selected word line WL0 is boosted to thereadout voltage Vread. Because the non-selected word line WL1 beadjacent to the selected word line WL0, potential of the selected wordline WL0 is dragged to potential of the non-selected word line WL1 andthus overshot by the coupling noise generating between the selected wordline WL0 and the non-selected word line WL1. If the select voltage Vcgrvof the selected word line WL0 undershoots or overshoots beyond thetolerance range, the select voltage Vcgrv may not launch the next stepof operation until the select voltage Vcgrv is converged within theallowable range so that it takes time for the readout operation,especially the readout for program verify operation. As a consequence,data readout operation and total programming operation will beincreased.

On the other hand, in the NAND type semiconductor memory 1 according tothe first embodiment, as described above, a timing in which the selectedvoltage Vcgrv may be delayed by the boosting voltage of non-selectedword lines WL1 to WLi in advance and consequently make the timing of theboosting voltage delay to let the selected word line WL0 undershoot.Further, being affected by the coupling noises from the non-selectedword line WL1 to WLi, a peak, in which the selected voltage Vcgrv of theselected word line WL0 is overshot, and the timing in which the selectedvoltage Vcgrv of the selected word line WL0 is undershot may be closetogether. As a consequence, noise generated in the selected voltageVcgrv of the selected word line WL0 may be reduced.

In the readout operation of the NAND type semiconductor memory 1according to the first embodiment, time for delaying the timing of theboosting voltage of the selected word line WL0 for the timing of theboosting voltage of the non-selected word lines WL1 to WLi can beadjusted accordingly, by a condition of the boosting voltage and alayout condition such as a space of word line WL, width of word line WL,etc. As far as being able to obtain the above-mentioned effect, thevalue is not especially limited; however it is larger than zero atleast. Also, the upper limit of the time delayed can be adjustedaccordingly as well; however, it is required that the selected word lineWL be set to the select voltage Vcgrv until the voltage of the drainside gate line SGD (See FIG. 4) has been the boosting voltage.Therefore, the upper limit of the time delayed is a time until the drainside selected gate line SGD is selected. As for the concrete numericalvalues of the time delayed, it is preferred to be equal or faster than 0μs and equal or later than 1.5 μs, and more in particular, it ispreferred to be set in a rage between 0.5 μs to 5.0 μs; 1.0 μs to 5.0μs; or 1.5 μs to 5.0 μs. Further in the period during the time delayed(the period t3 to t4), it is preferred that the control electrode of theselected memory cell MC0 be in an electrically floating state, and bemaintained at the voltage prior to the time t3.

Firstly, as shown in FIG. 8, in a case a timing of the boosting voltageof the non-selected word line WL and that of the boosting voltage of theselected word line WL are same, at the same time the non-selected wordline WL is risen up from the voltage Vdd to the non-select voltageVread, the selected word line WL is risen up from the voltage Vss to theselect voltage Vcgrv. Here, the select voltage Vcgrv is set to 2V. In apeak of the boosting voltage of the selected word line WL, asillustrated in a rounded symbol with a dashed line in the figure, theselect voltage Vcgrv applied to the selected word line WL is thusdragged by the coupling capacitive generated between the selected wordline WL and the non-selected word line WL, and thus the select voltageVcgrv is overshot. Further in the figure, a plurality of voltagewaveforms of the non-selected word lines WL are shown. The plurality ofvoltage waveforms are each of the voltage waveforms of the non-selectedword lines WL in which a minum, an intermediate, and a maximum of thecoupling capacitive are respectively added, for the non-selected wordlines WL differs in their coupling capacitive depending on positionsdeposited on the memory cell array 2.

On the other hand, as shown in FIG. 5, an overshoot of the selectvoltage Vcgrv may be reduced by delaying the timing of the boostingvoltage of the selected word line WL for 0.5 μs as compared to thetiming of the boosting voltage of the non-selected word line WL.Further, as shown in FIG. 6, an overshoot of the select voltage Vcgrvmay be reduced by delaying the timing of the boosting voltage of theselected word line WL for 1.5 μs as compared to the timing of theboosting voltage of the non-selected word line WL. In addition, as shownin FIG. 7, in the case the timing of the boosting voltage of theselected word line WL is made delay for 1.5 μs as compared to the timingof the boosting voltage the non-selected word line WL, an overshoot ofthe select voltage Vcgrv may be even more reduced as compared to thecase of delaying the timing for 0.5 μs or 1.0 μs. In the case the timingof the boosting voltage for 1.5 μs, the coupling noise added to theselected word line WL may become zero in substance. Therefore, the timefor setting up of the word line WL may be reduced and thus, speedup forthe velocity of data readout operation and the data program operationmay be realized.

In addition, the voltage waveforms of the non-volatile word lines WLshown in FIG. 5 to FIG. 8, is an example, where voltage is once madestep up to a voltage Vss to a voltage Vdd and then step up to thenon-select voltage Vread. However, in the NAND type nonvolatilesemiconductor memory 1 according to the first embodiment, even if thevoltage of non-selected word line WL is boosted to the non-selectvoltage Vread at a stretch, the same effect may be obtained.

[Configuration of Select Voltage Generation Circuit]

In the next place, a concrete circuit configuration in which the datareadout operation the NAND type nonvolatile semiconductor memory 1according to the first embodiment is realized. The select voltagetransfer circuit 63 of the control signal generation circuit 6 shown inthe above-mentioned FIG. 3, as shown with simplification in FIG. 9, isat least provided with: a program switching element (HVNE) 631; a levelshifter 632 that controls the program switching element 631; a Vssdischarge circuit 633; and a two-input NOR circuit 634 by which the Vssdischarge circuit 633 is controlled.

The program switching element 631 is configured, for instance, to an-channel transistor. One end of the program switching element 631 isconnected to the select voltage generation circuit 62, and the other endis connected to the CG driver 42 and the Vss discharge circuit 633. Thegate electrode is connected to the shift register 632. To the shiftregister, a CGSVCGRV-V signal, in which a continuity control of theprogram switching element 631 is performed in the case the word line WLis selected, and a VREADH signal, in which a continuity control of theprogram switching element 631 is performed in the case the word line WLis non-selected, are input. To the two-input NOR circuit 634, theCGSVCGRV-V signal and a CGSFLO-V signal, in which the word line WL iscontrolled to a floating state. The Vss discharge circuit 633 isprovided with the n-channel transistor LVNE and two n-channeltransistors HVND, which are electrically connected in series between theCG driver 42 and the voltage Vss.

In the select voltage transfer circuit 63, the voltage transmittransistor 41 (See FIG. 3.) become in an on-state, and after the voltageof the non-selected word line WL is boosted at a time t3, the word lineWL may become in a floating state in a period of a time t3 and a time t4(and after a time t6). Further in the select voltage transfer circuit63, in a period of the time t4 and the time t6, the select voltage maybe supplied to the word line WL.

Here, an operation of the select voltage transmit circuit 63 shown inFIG. 9 will be explained. Waveforms (voltage waveforms) of theCGSVCGRV-V signal and the CGSFLO-V signal that are input to thetwo-input NOR circuit 634, and a waveform of the selected word line WLespecially that of approximately the time t3 to the time t5 are shown inFIG. 10. The CGSVCGRV-V signal and the CGSFLO-V signal that are input tothe two-input NOR circuit 634 of the select voltage transfer circuit 63,is either at a voltage Vss level (a low level) at a time before reachingfor the time t3. Then, the n-channel transistor LVNE of the Vssdischarge circuit 633 is in an on-state, and the selected word line WL0is set to the voltage Vss.

Next, in a period of the time t3 and the time t4, the CGSVCGRV-V signalis in a state where the voltage Vss level is kept, and the CGSFLO-Vsignal is made risen up to the voltage Vdd level from the voltage Vsslevel. When this occurs, the n-channel transistor LVNE of the Vssdischarge circuit 633 that transmits the voltage Vss becomes in anoff-state, and the program switching element (HVNE) 631 that transmitsthe select voltage becomes in an off-state. Therefore, the source ofsupply of the selected word line WL is cut off, which as a consequencebecomes the floating state.

Next, at the time t5, the CGSVCGRV-V signal is risen up to the voltageVdd from the voltage Vss, then is fallen down from the voltage Vdd tothe voltage Vss. As a consequence, the n-channel transistor LVNE of theVss discharge circuit 633 is kept at an off-state, and the supply of thevoltage Vss from the Vss discharge circuit 633 is cut off. On the otherhand, the transistor for programming 631 becomes to an on-state.Therefore, the select voltage Vcgrv may be supplied to the selected wordline WL0.

[Cross Sectional Structure of Memory Cell Array]

A concrete sectional structure of the memory unit MU arranged into amemory cell array of the NAND type nonvolatile semiconductor memory 1 isshown in FIG. 11. This figure is a cross sectional view, in which onememory unit MU is cut off in the section that pass through both of thesource side selection transistor S1 and the drain side selectiontransistor S2, coincides with a longitudinal direction of the channel ofthe memory cell MC. The NAND type semiconductor memory 1 is configuredbased on a substrate 101. In the substrate 101, for instance a singlecrystal silicon substrate may be used practically.

A plurality of memory cells MC1 to MCi are either provided with: thesubstrate 101 (or a well region formed in the main surface of thesubstrate 101 (the p type semiconductor region)); a first gateinsulation film 102 on the substrate 101; an electric chargeaccumulation layer (a floating gate electrode) 103 of the first gateinsulation film 102; a second gate insulation film 104 on the electriccharge accumulation layer 103; a control electrode (a control gateelectrode) 105 on the second gate insulation film 104; and the sourceregion and the drain region 106. The first gate insulation film 102 is atunnel insulation film. In the electric charge layer 103, for instance,a poly crystal silicon film may be used practically. In a controlelectrode 105, either single layer film of the poly crystal siliconfilm, a refractory metal silicide film, or a refractory metal film, orthe composition film in which the refractory metal silicide film or therefractory metal silicide film are stack on the poly crystal siliconfilm, may be practically used. The control electrode 105 is formed withthe same layer and the same materials with the word line WL, and isformed to the word line WL integrally. The source region and the drainregion 106 are formed on the main surface of the substrate 101, and then-type semiconductor region in the first embodiment.

The source side selection transistor S1 and the drain side selectiontransistor S2 are provided with a memory cells MU, a substrate 101, agate insulation film 122 on the substrate 101, a gate electrode 123 onthe gate insulation film 122, and the source region and the drain region126. The gate electrode 123 is configured, electrically short-circuitinga lower layer formed by the same layer and the same material with theelectric charge accumulation layer 103 of the memory cell MC and anupper layer formed by the same layer and the same materials with thecontrol electrode 105. The source region and the drain region 126 areformed by the manufacturing process which is identical with themanufacturing process of the source region and the drain region 106.

In the source region 126 of the source side selection transistor S1, acell source line (CELSRC) 131S is electrically connected. For the cellsource line 131S, the refractory metal film, for instance, a tungstenfilm may be practically used. To the gate electrode 123 of the sourceside selection transistor S1, a source side shunt wiring 131SS iselectrically connected, which crosses a memory cell unit MU, and most ofwhich is extended toward the cell source line 131S. The source sideshunt wiring 131SS configures a source side selected gate line SGS, andis formed by the same layer and the same materials with the cell sourceline 131S.

To the drain region 126 of the drain side selection transistor S2, a bitline (BL) 132 is electrically connected via a transit wiring 131B. Forthe bit lines 132, a low-resistance materials, for instance, a copperfilm or an aluminum alloy film may be practically used. The transitwiring 131B is formed by the same layer and the same materials with thecell source line 131S. To the gate electrode 123 of the drain sideselection transistor S2, the drain side shunt wiring 131DS iselectrically connected, which crosses a memory cell unit MU, and most ofwhich is extended toward the cell source line 131S, is electricallyconnected. The drain side shunt wiring 131DS configures the drain sideselected gate line SGD, and is formed by the same layer and the samematerials with the cell source line 131S.

However showing with simplification in FIG. 11, the memory cell MC, thesource side selection transistor S1, the drain side selection transistorS2, the cell source line 131S, and the bit line 132 and such are coveredwith a passivation film.

[Data Retentiveness Characteristics of Memory Cell Array]

The memory cell MC of the NAND type nonvolatile semiconductor memory 1according to the first embodiment has four threshold voltage level, asshown in FIG. 12. In other words, in the memory cell, quaternary data intotal, “11”, “10”, “00” and “01”, may be stored.

Further in the NAND type semiconductor memory 1 according to the firstembodiment, the memory cell MC is not limited to storing the quaternaryvalue data; binary value data “1” “0” may be stored, and multiple valuedata such as ternary value or more than quaternary value data may bestored.

[A System Configuration of Memory Card]

In the first embodiment shown in the above-described FIG. 1, the NANDtype semiconductor memory 1 may be constructed as a semiconductor devicemounted on 1 chip, or as a memory module in which the one semiconductordevice or a plurality of the semiconductor is implemented. And furtheras shown in FIG. 13, the NAND type semiconductor memory 1 may beconstructed as a memory card 200. The memory card 200 is provided with:one (or a plurality of) NAND type nonvolatile semiconductor memory 1mounted on a card substrate; a controller 201 controlling the NAND typenonvolatile semiconductor memory 1; and a pad section 202. The padsection 202 connects a space between the NAND type nonvolatilesemiconductor memory 1 and an exterior apparatus of the memory card 200(not shown in the figure) and performs input of the control signal andinput of power or input/output of data.

In the data readout operation or the data program operation of the NANDtype nonvolatile semiconductor memory 1 according to the firstembodiment configured like this, timing of the boosting voltage of theselected word line WL is made delay for that of the boosting voltage ofthe non-selected word line WL. Therefore, coupling noise generating onthe selected word line WL may be reduced. As a consequence, an error onoperation may be prevented, and thus a reliability on an operation ofthe NAND type nonvolatile semiconductor memory 1 may be improved.

Further, because the reliability on the operation of the NAND typenonvolatile semiconductor memory 1 may be improved, the reliability onthe operation of the memory card 200, on which the NAND type nonvolatilesemiconductor memory 1 is installed, may be improved.

THE SECOND EMBODIMENT

The second embodiment of the present invention, in the NAND typenonvolatile semiconductor memory 1 according to the first embodimentdescribed above, explains an example, in which each of operation ordersof the source side selection transistor S1 and the drain side selectiontransistor S2 may be changed according to the position of the selectedmemory cell MC of the memory cell unit MU. Further, the secondembodiment explains an example, in which a level of the step-up voltageof the word line according to places of the selected memory cell MC ofthe memory cell unit MU.

In addition in the second embodiment, the same symbols are added to thesame elements that are same to the elements explained in the firstembodiment. An explanation for the same elements is omitted because suchexplanation duplicates except it is required.

In the memory cell array 2 of the NAND type nonvolatile semiconductormemory 1 according to the first embodiment shown in the above-describedFIG. 2, when selecting a memory cell MC0 adjacent to the source sideselection transistor S1, the selected word line WL0 is affected by acoupling noise is occurred as shown in FIG. 21 with a dashed linesurrounding, accompanying with the boosting voltage of the source sideselected gate line SGS. FIG. 21 shows a timing chart (a voltagewaveform) of a drain side selected gate SGD, a selected word line WL0, anon-selected word line WL1 to WLi, a source side selected gate line SGD,a selected word line WL0, a non-selected word line WL1 to WLi, thesource side selected gate line SGS, and the selected bit line BL0,respectively.

Because the selected memory cell MC0 is adjacent to a source sideselected gate line SGS without one memory cell intervening, a level ofthe boosting voltage (a voltage level) of the selected word line WL0 isovershot affecting a coupling noise, if the voltage of the source sideselected gate line SGS is boosted at the time t4. Because the drain sideselected transistor S2 is also in an on-state, especially at the timet4, in the case the data read out is “1”, if the selected memory cellMC0 is conducted affecting the coupling noise, electric discharge of theselected bit line BL0 occurs. In a state where a high voltage that isovershot to the selected word line WL0 is applied, because electricdischarge of the bit line BL is launched, the threshold voltage of theselected memory cell MC seems to be lower than a value intended. Suchtendency is even more remarkable by narrowing of a wiring interval ofthe word lines and such by further miniaturization processing.

Also in the NAND type nonvolatile semiconductor memory 1, the memorycell unit MC connects a plurality of memory cells MC electrically. Therespective channel region of the memory cell MC, on a data readoutoperation, is current paths, in which electric charge charged into theselected bit line BL is flown into the cell source line SELSRC. Theselect voltage of the selected word line WL0 is also affected by thecoupling noise that generates between a space of such current paths

This inventors and the like eagerly conducted an examination. As aconsequence, on a data readout operation of the NAND type nonvolatilesemiconductor memory 1, they assumed that a coupling noise of a space,between the source side gate line SGS of source side selected transistorS1 or the drain side gate line SGD of drain side selected transistor S2and the selected word line WL, may be reduced, by making either one ofthe source side selection transistor S1 of one end of the memory cellunit MU or the drain side selection transistor S2 of the other endperform an on-operation prior to the counterpart, depending on aarrangement position of the selection memory cell MC of memory cell unitMU, and thus completed the present invention. Further, this inventorsand the like assumed that a coupling noise may be reduced, which occursin the select voltage of the selected word line WL, which occurs among aspace of current paths which a channel region of the memory cell unitMU, by correcting voltages applied to the selected word line WLdepending on an order of the on-operation of the selection transistorS1, S2, and thus completed the present invention.

[Configuration of NAND Type Nonvolatile Semiconductor Memory]

A system configuration of the NAND type nonvolatile semiconductor memory1 according to the second embodiment is basically the same to the systemconfiguration of the NAND type nonvolatile semiconductor memory 1according to the first embodiment shown in the above-described FIG. 1.In addition, the circuit configuration of memory cell array 2 of theNAND type nonvolatile semiconductor memory 1 is same to the circuitconfiguration of the memory cell array 2 shown in the above describedFIG. 2. The sectional structure of memory cell unit MU is the same tothe sectional structure of the memory cell unit MU shown in the abovedescribed FIG. 11.

Here in the NAND type nonvolatile semiconductor memory 1 according tothe first embodiment 1 showing in the above described FIG. 11, it isnecessary to save capacity in a space between the electric chargeaccumulation layer 103 of the memory cell MC and the control electrode105 (a word line WL), and a that between the substrate 101 (a channelregion) and the electric charge accumulation layer 103, respectively, toimprove the data program characteristics. On the other hand, because ofthe wiring is required to be minute, it is necessary to make small andto narrow each of alienation distance of space among the source sidegate line SGS, the drain side gate line SGS, the word line WL, thesource side selected gate line SGS, and that between the drain sideselected gate line SGD and the word line WL. Therefore, influence ofcoupling noises becomes large especially in the space between the sourceline side selected gate line SGS and the word line WL, and that betweenthe drain side selected gate line SGD and the word line WL.

In addition, in the NAND type nonvolatile semiconductor memory 1, asource side shunt wiring 131SS is connected to the source side selectedgate line SGS, and the drain side shunt wiring 131D is connected to thedrain side selected gate line SGD. These source side shunt wiring 131SSand the drain side shunt wiring 131DS is positioned duplicated on theword lines WL. As a result, coupling noises also occur between each ofthe source side selected gate line SGS, drain side selected gate lineSGD, and the word lines WL. Further explained in detail, the drain sideshunt wiring 131DS is connected to the drain side selected gate line SGDthat is positioned on the same memory block, and the source side shuntwiring 131SS is connected to the source side selected gate line SGSpositioned on the adjacent memory block. Therefore, if the drain sidegate line SGD is charged after the source side selected gate line SGS,in the selected memory cell MC, a coupling noise from the drain sideshunt wiring 131S is received when the selected memory cell MC ispositioned under the drain side shunt wiring 131DS.

In the NAND type nonvolatile semiconductor memory 1 according to thesecond embodiment, such influence of coupling noise may be reduced onthe data readout operation.

[Data Readout Operation]

Next, the data readout operation of the NAND type nonvolatilesemiconductor memory 1 according to the second embodiment is explainedreferring to the circuit diagram showing in FIG. 2 with FIG. 4. Thetiming chart in FIG. 4 is a timing chart, in which data stored in thememory cell MC0 adjacent to the source side selection transistor S1 areread out, in the memory cell unit MU0 showing in FIG. 2.

The NAND type nonvolatile semiconductor memory 1 according to the secondembodiment applies, at first at a time t1, a voltage Vsg is applied tothe source side selected gate line SGS. Next at a time t2, a voltage Vb1is applied to the selected bit line BL0. Then at a time t3, voltages areapplied to the non-selected word lines WL1 to WLi that is connected tothe non-selected memory cells MC1 to MCi other than the selected wordline WL0 and the selected memory cell MC0 that is connected to theselected memory cell MC0. The non-select voltage Vread is applied to thenon-selected word lines WL1 to WLi, and the select voltage Vcg(=Vcgrv−ΔV) is applied to the selected word lines WL0. Afterwards, at atime t4, the voltage Vsg is applied to the drain side selected gate lineSGD and then makes the drain side selection transistor S2 be in anon-state. This means that, by a series of data readout operation, thedrain side selection transistor S2, the source side selection transistorS1, and the non-selected memory cell MC1 to MCi become in an on-state,and a voltage change occurs in the selected bit line BL0 depending oneither data “0” is stored or the data “1” is stored. At the time t4,data may be read out by judging the voltage change of the selected bitline BL0.

On the other hand in the memory cell unit MU0 showing theabove-described FIG. 2, when data stored in the memory cell MCi adjacentto the drain side selection transistor S2, in the NAND type nonvolatilesemiconductor memory 1 according to the second embodiment, timing forapplying the voltage to the source side selected gate line SGS and thatfor applying the voltage to the drain side selected gate line SGD areset to be in a reverse order. A timing chart of data readout operationis shown in FIG. 5. At first at a time t1, a voltage Vsg is applied tothe drain side selected gate line SGD. Next at a time t2, a voltage Vb1is applied to the selected bit line BL0. Then at a time t3, a voltage isapplied to the non-selected word lines WL0 to Wli−1. To the non-selectedword lines WL0 to WLi−1, the non-select voltage Vread is applied. To theselected word line WLi a select voltage Vcg (=Vcgrv) is applied.Afterwards at a time t4, the voltage Vsg is applied to the source sideselected gate line SGS, and thus let the source side selectiontransistor S1 be in an on-state. By a series of data readout operation,at a time t4, a voltage change of the selected bit line BL0 is judged.

By performing the above described data readout operation. in the NANDtype nonvolatile semiconductor memory 1 according to the secondembodiment, in the case the selected memory cell MC0 is adjacent to thesource side selected gate line SGS, coupling noise occurring between theselected word line WL0 and the source side selected gate line SGS may bereduced. In the case the selected memory cell MCi is adjacent to thedrain side selected gate line SGD, coupling noise occurring between theselected word line WLi and the drain side gate line SGD may be reduced.To be concrete, when a data readout operation of the selected memorycell MC0 adjacent to the source side selected gate line SGS isperformed, the coupling noise occurring in the selected word line WL0among the space of source side selected gate line SGS may be reduced, bythe boosting voltage of the source side gate line SGS, even though thevoltage of the selected word line WL0 corresponding to the selectedmemory cell MC0 is boosted. After reducing the coupling noise, thevoltage of the drain side selected gate line SGD is boosted so that avoltage change of the selected bit line BL0 may be judged. Also, in thecase a data readout operation of the selected memory cell MCi that isadjacent to the drain side selected gate line SGD, by the boostedvoltage of the drain side selected gate line SGD, the coupling noiseoccurring in the selected word line WLi among the space of the drainside selected gate line SGD may be reduced, even though the voltage ofthe selected word line WLi corresponding to the selected memory cell MCiis boosted. After reducing the coupling noise, the voltage of the sourceside selected gate line SGS is boosted so that the voltage change of theselected bit line BL0 may be judged. Therefore, data stored in theselected memory cell MC0, MCi may be read out precisely.

Here, in the memory cell unit MC to which the selected memory cell MCbelongs to, a timing chart will be explained, which is in a state thatthe selected memory cell MC does not receive any influences by thecoupling noise that occurs among the channel region. A timing chartshown in FIG. 16 is a timing chart that shows a data readout operationstored in the selected memory cell MC (selected word line WL0) adjacentto the source side selection transistor S1 (the source side selectedgate line SGS). A timing chart shown in FIG. 17 is a timing chart thatshows a data readout operation stored in the selected memory cell MCi(where the selected word line is WLi) adjacent to the drain sideselection transistor S2 (drain side selected gate line SGD). Further inthese timing charts, the same select voltage Vcgrv is appliedrespectively to the selected word line WL0, WLi.

In the NAND type nonvolatile semiconductor memory 1 according to thesecond embodiment, voltage values of: the select voltage Vcg applied tothe selected word line WL0 that is connected to the selected memory cellMC0 when the voltage of the source side selected gate line SGS that isconnected to the source side selection transistor S1 shown in FIG. 14 isboosted in advance; and the select voltage Vcg applied to the selectedword line WLi that is connected to the selected memory cell MCi whenvoltage of the drain side selected gate line SGD that is connected tothe drain side selection transistor S2 shown in FIG. 15 is boosted inadvance, are different.

Explaining to be concrete, when data stored in the selected memory cellMC0 adjacent to the source side selection transistor S1 is read out, asshown in FIG. 14, the voltage of the selected word line WL is stepped upat a time t3, the select voltage Vcg used for the voltage step-up islower as well as the minute voltage ΔV as compared to the select voltageVcgrv shown in FIG. 16. On the other hand, in the case data stored inthe selected memory cell MCi adjacent to the drain side selectiontransistor S2 is read out, as shown in FIG. 15, the voltage of theselected word line WLi is boosted at a the time t3; this select voltageVcg used in the boosting voltage is the same potential to the selectvoltage shown in FIG. 17 (Vcg=Vcgrv).

The reason for changing the voltage value of the select voltage Vcg,especially the reason for setting the select voltage Vcg being low aswell as the minute voltage in a readout operation of the data stored inthe selected memory cell MC0 adjacent to the source side selectiontransistor S1, is because of reducing the coupling noise occurring amongthe channel region (a current path) of the selected memory cell unit MU0and added to the selected word line WL0. Such coupling noise, as shownin FIG. 14, occurs in the voltage waveform of the selected word line WL0when exceeding the time t4. Here, as shown in FIG. 16, if the selectvoltage Vcgrv is just applied to the selected word line WL0, thepre-charged voltage Vb1 that is pre-charged to the selected bit line BL0at the time t2, is flown in the channel region of the selected memorycell unit MU0 by the on-operation of the drain side selection transistorS2, then the channel region is charged. Based on the coupling capacitiveoccurring between the channel region and the selected word line WL0,coupling noise is added to the select voltage Vcgrv of the selected wordline WL0, and an overshoot occurs in the select voltage Vcgrv as shownin FIG. 18. Especially in the program verify operation, because thethreshold voltage of the memory cell MC seems to be low by theovershoot, distribution of the threshold voltage is spread to the higherdirection. Thus, the select voltage Vcg may be set to be lower than thethreshold voltage by setting the select voltage Vcg to be low as well asthe minute voltage ΔV from the select voltage Vcgrv, even though theovershooting. As a consequence, it may be inhibited that thedistribution of threshold be spread to the higher direction. This iseffective to the NAND type nonvolatile semiconductor memory 1, in whichthe multiple value data may be stored showing in the above-describedFIG. 12, where it is required to control the threshold voltage of thememory cell MC to be narrow.

The minute voltage ΔV is stable at all times. Further, the minutevoltage ΔV may be variable. In the case the minute voltage ΔV isvariable, the coupling noise is generated between channel region andselection memory cell MC, and then, selection memory cell MC adds thecoupling noise, and for this coupling noise, selection voltage Vcg isput every data readout operation, it can be corrected optimum. Here,instead of every operation of data readout, the variable voltage of theminute voltage ΔV may be either every memory cell unit MU, or everyarrangement position of the selected memory cell MC of the memory cellunit MU; and the variable unit of the minute voltage ΔV may be a unit inwhich these two or more than two are combined.

Albeit the value of minute voltage ΔV can be adjusted accordingly by asystem configuration of the NAND type nonvolatile semiconductor memory1, and is not limited to the values described below; the value should bemore than Vcgrv, that is to be concrete, more than 0V and equal to orless than 2V. More preferably, the voltage of minute voltage ΔV be morethan 0V and equal to or less than 1V.

On the other hand, when the voltage of the drain side selected gate lineSGD that is connected to the drain side selection transistor S2, isstepped up to prior to the timing of the boosting voltage of theselected word line WLi that is connected to the selected memory cellMCi, the select voltage Vcgrv is used for the select voltage Vcg,because the coupling noise occurring among the space of drain region isfunctioned to an undershoot. Here, a timing chart is shown in FIG. 17,in which the coupling noise is reduced that occurs in the space amongthe drain side selected gate line SGD and added to the selected wordline WLi. In FIG. 19, a timing chart is shown, in a case the selectvoltage Vcg, which is calculated by subtracting the minute voltage ΔVfrom the select voltage Vcgrv, is applied to the selected word line WLi.That is, when the voltage of the source side gate line SGS that isconnected to the source side selection transistor S1 is stepped up inadvance to the drain side gate line SGD, which is connected to the drainside selection transistor S2, the select voltage Vcg applied to theselected word line WL0 is set to be low. To be concrete, a low selectvoltage Vcg that is calculated by subtracting the minute voltage ΔV fromthe select voltage Vcgrv from the select voltage Vcgrv is used. In theother way of viewing, when the voltage of the drain side selected gateline SGD is stepped up in advance to the source side selected gate lineSGS, the select voltage Vcg applied to the selected word line WLi is setto be high as compared to the select voltage Vcg applied to the selectedword line WL0.

[Advantage of Data Readout Operation]

The NAND type nonvolatile semiconductor memory 1 according to the secondembodiment, on the data readout operation, when the selected memory cellMC0 is adjacent to the source side selection transistor S1, a couplingnoise may be reduced, which occurs among a space of the source sideselected gate line SGS and is added to the selected word line WL0. Inaddition, when the selected memory cell MC0 is adjacent to the sourceside selection transistor S1, the coupling noise may be reduced, whichoccurs among a space of the selected memory cell unit MU0 and is addedto the selected word line WL0.

In addition, when the selected memory cell MCi is adjacent to the drainside selection transistor S2, the coupling noise may be reduced, whichoccurs among a space of the drain side selected gate line SGD and isadded to the selected word line WLi. Further, when the selected memorycell MCi is adjacent to the drain side selection transistor S2, no badinfluence of coupling noise that occurs among a space of the channelregion of the selected memory cell unit MUi and is added to the selectedword line WLi is received. Therefore, an precise data readout operationmay be realized, and thus a reliability on the operation of the NANDtype nonvolatile semiconductor memory 1 may be improved.

In addition, in the NAND type nonvolatile semiconductor memory 1according to the second embodiment, readout operation of data that isstored in the selected memory cell MC0 adjacent to the source sideselection transistor S1, and readout operation of a data that is storedin the selected memory cell MCi adjacent to the drain side selectiontransistor S2, will be explained. If either of the memory cells, fromthe MC1 that is arranged to the source side selection transistor S1 viathe memory cell MC0 to the memory cell MCi−1 that is arranged to thedrain side selection transistor S2 via the memory cell MCi, is selected,the word lines WL1 to WLi−1 of the memory cells MC1 to MCi−1 are notadjacent to neither of the source side selected gate line SGS nor thedrain side selection gate line SGD. Thus, the coupling noise added tothe selected word lines WL1 to WLi−1 is small. Therefore, when either ofthe memory cells MC1 to MCi−1 is selected and the stored data is readout, either of the source side selection transistor S1 or the drain sideselection transistor S2 may be made perform an on-operation prior to thecounterparts.

However, the coupling noise added to the selected word line WL thatoccurs among a space of the channel region of the selected memory cellunit MU is required to be considered, and the coupling noise is requiredto be reduced. For instance, when the selected memory cell MC is nearthe source side selection transistor S1 as compared to the drain sideselection transistor S2, the voltage of source side selection gate lineSGS is boosted in advance. On the contrary, when the selected memorycell MC is near the drain side selection transistor S2 as compared tothe source side selection transistor S1, the voltage of the drain sideselection gate line SGD is boosted in advance.

To be concrete, when totally k memory cells MC is connected in series inone memory cell unit MU, if either of the memory cell from the first tothe n^(th) MC0 to MCn−1, which is nearer to the source side selectiontransistor S1 in the memory cell MC that is connected in series, isselected, the voltage of source side selection gate line SGS is boostedin advance, and the voltage of drain side selection gate line SGD isstepped up in advance. Further, if either of the memory cells Mcn toMCk−1, from the n+1^(th) memory cell that is near the drain sideselection transistor to the k^(th) memory cell that is near the drainside selection transistor S2 is selected among the memory cells MC thatis connected in series, voltage of the drain side selection gate lineSGD is boosted in advance and the voltage of the source side selectiongate line SGS is boosted afterwards. Here, “k” is an integer equal to ormore than 2, and “k−1” is equivalent to “i” that is marked in the laststep of the memory cells MC; “n” is an integer equal to or more than 0that is smaller than “k.”

In addition, in the NAND type nonvolatile semiconductor memory 1according to the second embodiment, as the sectional structure is shownin the above described FIG. 1, a source side shunt wiring 131SS isarranged on the memory cells MC0 to MCn−1 of the memory cell unit MU,and the drain side shunt wiring 131DS is arranged on the memory cellsMCn to MCk−1 (MCn to MCi). That is, if either of the memory cells MC0 toMCn−1 is selected, coupling noise, which occurs among a space of thesource side shunt wiring 131SS of the selected word line to either ofthe word lines WL0 to WLn−1, is added; therefore, it is effective thatthe voltage of the source side gate line SGS is boosted in advance onthe data readout operation. As well, if either of the memory cells MCnto MCi is selected, coupling noise, which occurs among a space of thedrain side shunt wiring 131DS, occurs in either of the selected wordlines WLn to WLi; therefore, it is effective that the voltage of drainside gate line SGD is boosted in advance on the data readout operation.

[Configuration of Select Voltage Generation Circuit]

In the NAND type nonvolatile semiconductor memory 1 according to thesecond embodiment, the select voltage generation circuit 62 of thecontrol signal generation circuit shown in FIG. 3, generates, on thedata readout operation, the select voltage Vcg (=Vcgrv−ΔV) applied toeither of the selected word line WL0 to WLn−1, or the select voltage Vcg(=Vcgrv) applied to either of the selected word lines WLn to WLi,respectively. The select voltage generation circuit 62 is at leastprovided with a voltage value selection circuit 621 and a voltage outputcircuit 622.

The voltage selection circuit 621 outputs a voltage value decisionsignal FSVCG that determines a voltage value applied to the selectedword line WL to the voltage output circuit 622, based on an input of aROMFUS signal setting value signal. In the ROMFUSE setting value signal,information is included, whether the selected memory cell MC (selectedword line WL) is at the source side selection transistor S1 or at thedrain side selection transistor S2.

The voltage output circuit 622 generates the select voltage Vcg appliedto the selected word line WL (=Vcgrv−ΔV) or a select voltage Vcg(=Vcgrv), based on the input of the voltage value decision signal FSVCG,then outputs the select voltage Vcg to the select voltage transfercircuit 63. The voltage output circuit 622 is basically configured by aresistance dividing circuit so that a variety of select voltage Vcg maybe generated by changing a divide position accordingly based on thevoltage value decision signal FSVCG.

[Application to Memory Card]

In the NAND type nonvolatile semiconductor memory 1 according to thesecond embodiment, a memory card 200 showing in the above described FIG.13 may be constructed. The memory card 200 basically has the sameconfiguration with the memory card 200 shown in the FIG. 13, onlysubstituting the NAND type nonvolatile semiconductor memory 1.

In the data readout operation or data program operation of the NAND typenonvolatile semiconductor memory 1 according to the second embodimentconfigured in this manner, the respective order of operation, of thesource side selection transistor S1 and the drain side selectiontransistor S2, according to the arranged position of the selected memorycell MC of the memory cell unit MU, has been changed. Therefore,coupling noise that occurs among a space of the source side selectiongate line SGS or that of the drain side selection gate line SGD and isadded to the selected word line WL may be reduced. In addition, thecoupling noise that occurs among a space of the channel region (currentpaths) of the memory cell unit MU and is added to the selected word lineWL may be reduced. As a consequence, an error on operation may beprevented, and thus a reliability of the NAND type nonvolatilesemiconductor memory 1 on operation may be improved.

Further, because the reliability of the NAND type nonvolatilesemiconductor memory 1 on operation may be improved, the reliability ofthe memory card 200, on which the NAND type nonvolatile semiconductormemory 1 is installed, may be improved.

The Other Embodiments

The present invention is not limited to the NAND type nonvolatilesemiconductor memory 1 according to each of the first and secondembodiments described above. For instance, the present invention may beconsidered as a NAND type nonvolatile semiconductor memory that combinesthe NAND type nonvolatile semiconductor memory 1 according to the firstembodiment with the NAND type nonvolatile semiconductor memory 1according to the second embodiment. That is, in the NAND typenonvolatile semiconductor memory, an operation order of the source sideselection transistor S1 and the drain side selection transistor S2 maybe substituted, as well as shifting the timing for the boosting voltageof the selected word line WL and that for the boosting voltage of thenon-selected word line WL.

1. A nonvolatile semiconductor memory device comprising: a memory cellunit including a plurality of electrically connected memory cells, eachmemory cell having an electric charge accumulation layer and a controlgate stacked thereon; and a source side selection transistorelectrically connected to said memory cell of one end of said pluralityof memory cells; and a drain side selection transistor electricallyconnected to the other end of said plurality of memory cells; aplurality of word lines each of which is electrically connected to acontrol electrode of one of said plurality of memory cells; a sourceline which is electrically connected to said source side selectiontransistor; and a gate control circuit, in which on a data readoutoperation, said drain side selection transistor is operated after theoperation of said source side selection transistor when the number ofmemory cells between a selected memory cell and said source sideselection memory cell is equal to a predetermined number, and saidsource side selection transistor is operated after the operation of saiddrain side selection transistor when the number of memory cells betweena selected memory cell and said source side selection memory cell isgreater than said predetermined number by one.
 2. The nonvolatilesemiconductor memory device according to claim 1 wherein said gatecontrol circuit, in which on a data readout operation, said drain sideselection transistor is operated after the operation of said source sideselection transistor when the number of memory cells between a selectedmemory cell and said source side selection memory cell is smaller thansaid predetermined number, and said source side selection transistor isoperated after the operation of said drain side selection transistorwhen the number of memory cells between a selected memory cell and saidsource side selection memory cell is greater than said predeterminednumber by two or more.
 3. The nonvolatile semiconductor memory deviceaccording to claim 1 wherein said predetermined number is greater thanone.
 4. The nonvolatile semiconductor memory device according to claim 1wherein said predetermined number is smaller than the number of saidplurality of memory cells by two or more.
 5. The nonvolatilesemiconductor memory device according to claim 1 wherein two multipliedby said predetermined number is less by one than, equal to, or larger byone than the number of memory cells among said plurality of memorycells.
 6. The nonvolatile semiconductor memory device according to claim1 further comprising a source side shunt wiring, said source side shuntwiring being electrically connected to a control gate of said sourceside selection transistor, wherein said drain side selection transistoris operated after the operation of said source side selection transistorwhen said source side shunt is arranged over said selected memory cellor a memory cell adjacent to said selected memory cell to the side ofsaid source side selection transistor.
 7. The nonvolatile semiconductormemory device according to claim 1 further comprising a drain side shuntwiring, said drain side shunt wiring being electrically connected to acontrol gate of said drain side selection transistor, wherein saidsource side selection transistor is operated after the operation of saiddrain side selection transistor when said drain side shunt is arrangedover said selected memory cell or a memory cell adjacent to saidselected memory cell to the side of said drain side selectiontransistor.
 8. The nonvolatile semiconductor memory device according toclaim 1 wherein said memory cells are multi-bit cells.
 9. A method ofdriving a nonvolatile semiconductor memory, said nonvolatilesemiconductor memory comprising: a memory cell unit including aplurality of electrically connected memory cells, each memory cellhaving an electric charge accumulation layer and a control gate stackedthereon; and a source side selection transistor electrically connectedto said memory cell of one end of said plurality of memory cells; and adrain side selection transistor electrically connected to the other endof said plurality of memory cells; a plurality of word lines each ofwhich is electrically connected to a control electrode of one of saidplurality of memory cells; and a source line which is electricallyconnected to said source side selection transistor; said methodcomprising: operating said drain side selection transistor after theoperation of said source side selection transistor when the number ofmemory cells between a selected memory cell and said source sideselection memory cell is smaller than said predetermined number; andoperating said source side selection transistor after the operation ofsaid drain side selection transistor when the number of memory cellsbetween a selected memory cell and said source side selection memorycell is greater than said predetermined number by two or more.
 10. Themethod of driving the nonvolatile semiconductor memory according toclaim 9, said method further comprising: operating said drain sideselection transistor after the operation of said source side selectiontransistor when the number of memory cells between a selected memorycell and said source side selection memory cell is smaller than saidpredetermined number; and operating said source side selectiontransistor after the operation of said drain side selection transistorwhen the number of memory cells between a selected memory cell and saidsource side selection memory cell is greater than said predeterminednumber by two or more.
 11. The method of driving the nonvolatilesemiconductor memory according to claim 9, wherein two multiplied bysaid predetermined number is less by one than, equal to, or larger byone than the number of memory cells among said plurality of memorycells.
 12. The method of driving the nonvolatile semiconductor memoryaccording to claim 9, said memory further comprising a source side shuntwiring, said source side shunt wiring being electrically connected to acontrol gate of said source side selection transistor, wherein saiddrain side selection transistor is operated after the operation of saidsource side selection transistor when said source side shunt is arrangedover said selected memory cell or a memory cell adjacent to saidselected memory cell to the side of said source side selectiontransistor.
 13. The method of driving the nonvolatile semiconductormemory according to claim 9, said nonvolatile semiconductor memoryfurther comprising a drain side shunt wiring, said drain side shuntwiring being electrically connected to a control gate of said drain sideselection transistor, wherein said source side selection transistor isoperated after the operation of said drain side selection transistorwhen said drain side shunt is arranged over said selected memory cell ora memory cell adjacent to said selected memory cell to the side of saiddrain side selection transistor.
 14. The method of driving thenonvolatile semiconductor memory according to claim 9 wherein saidmemory cells are multi-bit cells.
 15. A memory card having a nonvolatilesemiconductor memory, said nonvolatile semiconductor memory comprising:a memory cell unit including a plurality of electrically connectedmemory cells, each memory cell having an electric charge accumulationlayer and a control gate stacked thereon; and a source side selectiontransistor electrically connected to said memory cell of one end of saidplurality of memory cells; and a drain side selection transistorelectrically connected to the other end of said plurality of memorycells; a plurality of word lines each of which is electrically connectedto a control electrode of one of said plurality of memory cells; asource line which is electrically connected to said source sideselection transistor; and a gate control circuit, in which on a datareadout operation, said drain side selection transistor is operatedafter the operation of said source side selection transistor when thenumber of memory cells between a selected memory cell and said sourceside selection memory cell is equal to a predetermined number, and saidsource side selection transistor is operated after the operation of saiddrain side selection transistor when the number of memory cells betweena selected memory cell and said source side selection memory cell isgreater than said predetermined number by one.
 16. The memory cardhaving the nonvolatile semiconductor memory according to claim 15,wherein said gate control circuit, in which on a data readout operation,said drain side selection transistor is operated after the operation ofsaid source side selection transistor when the number of memory cellsbetween a selected memory cell and said source side selection memorycell is smaller than said predetermined number, and said source sideselection transistor is operated after the operation of said drain sideselection transistor when the number of memory cells between a selectedmemory cell and said source side selection memory cell is greater thansaid predetermined number by two or more.
 17. The memory card having thenonvolatile semiconductor memory according to claim 15, wherein twomultiplied by said predetermined number is less by one than, equal to,or larger by one than the number of memory cells among said plurality ofmemory cells.
 18. The memory card having the nonvolatile semiconductormemory according to claim 15, said memory further comprising a sourceside shunt wiring, said source side shunt wiring being electricallyconnected to a control gate of said source side selection transistor,wherein said drain side selection transistor is operated after theoperation of said source side selection transistor when said source sideshunt is arranged over said selected memory cell or a memory celladjacent to said selected memory cell to the side of said source sideselection transistor.
 19. The memory card having the nonvolatilesemiconductor memory according to claim 15, said nonvolatilesemiconductor memory further comprising a drain side shunt wiring, saiddrain side shunt wiring being electrically connected to a control gateof said drain side selection transistor, wherein said source sideselection transistor is operated after the operation of said drain sideselection transistor when said drain side shunt is arranged over saidselected memory cell or a memory cell adjacent to said selected memorycell to the side of said drain side selection transistor.
 20. The memorycard according to claim 15 wherein said memory cells are multi-bitcells.
 21. The nonvolatile semiconductor memory device according toclaim 1 wherein the voltage applied to a selected word line of saidselected memory cell is not lowered when said source side selectiontransistor is operated after the operation of said drain side selectiontransistor and the voltage applied to said selected word line is loweredwhen said drain side selection transistor is operated after theoperation of said source side selection transistor.
 22. The method ofdriving a nonvolatile semiconductor memory according to claim 9 whereinthe voltage applied to a selected word line of said selected memory cellis not lowered when said source side selection transistor is operatedafter the operation of said drain side selection transistor and thevoltage applied to said selected word line is lowered when said drainside selection transistor is operated after the operation of said sourceside selection transistor.
 23. The memory card having a nonvolatilesemiconductor memory according to claim 15 wherein the voltage appliedto a selected word line of said selected memory cell is not lowered whensaid source side selection transistor is operated after the operation ofsaid drain side selection transistor and the voltage applied to saidselected word line is lowered when said drain side selection transistoris operated after the operation of said source side selectiontransistor.